Increased low-temperature damping in yttrium iron garnet thin films

We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature [corresponding to a damping coefficient α = (9.0 ± 0.2 ) × 10−4]...

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Veröffentlicht in:Physical review. B 2017-05, Vol.95 (17), p.174411, Article 174411
Hauptverfasser: Jermain, C. L., Aradhya, S. V., Reynolds, N. D., Buhrman, R. A., Brangham, J. T., Page, M. R., Hammel, P. C., Yang, F. Y., Ralph, D. C.
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Sprache:eng
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Zusammenfassung:We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature [corresponding to a damping coefficient α = (9.0 ± 0.2 ) × 10−4], comparable to previous results for high-quality YIG films of similar thickness, the linewidth increases strongly at low temperatures, by a factor of almost 30. This increase cannot be explained as due to two-magnon scattering from defects at the sample interfaces. We point out that the increased low-temperature linewidth can be explained by impurity relaxation mechanisms that were elucidated 50 years ago in bulk YIG samples. High-purity starting materials and careful optimization of growth protocols to avoid nonstoichiometries should therefore be employed for making low-temperature thin-film YIG devices.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.95.174411