Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap t...

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Veröffentlicht in:Chemistry of materials 2016-10, Vol.28 (20), p.7194-7197
Hauptverfasser: Chen, Jianyi, Zhou, Wu, Tang, Wei, Tian, Bingbing, Zhao, Xiaoxu, Xu, Hai, Liu, Yanpeng, Geng, Dechao, Tan, Sherman Jun Rong, Fu, Wei, Loh, Kian Ping
Format: Artikel
Sprache:eng
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MATERIALS SCIENCE
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Zusammenfassung:Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap transition at the single atomic sheet state as well as optically accessible spin degree of freedom in valleytronics.
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.6b03639