Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

We use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic-field (B)-induced SIT in the...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (2), Article 020503
Hauptverfasser: Zeng, S. W., Huang, Z., Lv, W. M., Bao, N. N., Gopinadhan, K., Jian, L. K., Herng, T. S., Liu, Z. Q., Zhao, Y. L., Li, C. J., Harsan Ma, H. J., Yang, P., Ding, J., Venkatesan, T., Ariando
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Sprache:eng
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Zusammenfassung:We use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic-field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and by magnetic fields are quantum phase transitions and the transitions are governed by percolation effects-quantum mechanical in the former and classical in the latter cases. Compared to the hole-doped cuprates, the SITs in the electron-doped system occur at critical sheet resistances (R sub(c)) much lower than the pair quantum resistance R sub(Q) = h/(2e) super(2) = 6.45 k[Omega], suggesting the possible existence of fermionic excitations at finite temperatures at the insulating phase near the SITs.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.92.020503