Graphene-induced Ge (001) surface faceting

Faceted Ge surfaces result from the growth of a graphene overlayer on Ge (001) by chemical vapor deposition. The surface exhibits four-fold symmetry after faceting, with the surface normal of the facets tilted towards [100] from the average surface normal. X-ray reflectivity measurements allow the facet angles, directions, and symmetry to be measured precisely as a function of deposition conditions. Graphene grown from a CH4 precursor in a H2/Ar carrier atmosphere at temperatures from 870 to 920°C yields facets on the Ge surface with an average facet angle of 7.70°±0.07°. Additionally, a distribution of facet angles is observed with an angular spread of approximately ±1°. The facet pattern has four-fold symmetry over a large area with no indication of the formation of competing facets from reflectivity measurements. The facet angle tends toward the {107} facet of Ge with slight variation as a function of temperature indicating that the facet angles are dominated by surface energetics. The slight dependence on temperature is accompanied by a reconstruction of the surface into {001} facets under slow-cooling conditions, suggesting that the surface diffusion kinetics and temperature dependence have an important role in the formation of the faceted surface structure at lower temperatures. [Display omitted] •A faceted Ge surface structure results from graphene growth on Ge(001).•X-ray reflectivity measurements provide a precise measurement of the facet angle and symmetry.•The surface structure shows a four-fold symmetry of the faceting and an average faceting angle of 7.7°.•The faceting angle has weak dependence on the graphene growth temperature.