Bulk Growth of Large Area SiC Crystals

Bulk Growth of Large Area SiC Crystals

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous...

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Veröffentlicht in:Materials Science Forum 2016-05, Vol.858 (5, 2016), p.5-10
Hauptverfasser: Dudley, Michael, Deyneka, Eugene, Leonard, R.T., Ambati, Jyothi, Seaman, Jeff, Powell, Adrian R., Guo, J.Q., Burk, Albert A., Balkas, Elif, Kramarenko, Olek, Horton, Chris, Sakhalkar, Varad, O’Loughlin, M., Paisley, Michael J., Sumakeris, Joseph J., Khlebnikov, Yuri, Gangwal, Sumit, Tsevtkov, V., McClure, Andy
Format: Artikel
Sprache:eng
Schlagworte:
Crystallinity
Crystals
Dislocation density
Epitaxial growth
Epitaxial layers
Materials science
Silicon carbide
Substrates
Transport
Wire
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Zusammenfassung:The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.5