Oblique patterned etching of vertical silicon sidewalls
A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity patte...
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| Veröffentlicht in: | Applied physics letters 2016-04, Vol.108 (14) |
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| container_issue | 14 |
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| container_title | Applied physics letters |
| container_volume | 108 |
| creator | Bruce Burckel, D. Finnegan, Patrick S. David Henry, M. Resnick, Paul J. Jarecki, Robert L. |
| description | A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches. |
| doi_str_mv | 10.1063/1.4945681 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1326637</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121816687</sourcerecordid><originalsourceid>FETCH-LOGICAL-c455t-b6671a745750750b391b48eac0e0dcdfc230623ebb02ba605c99e9e2e85d76c13</originalsourceid><addsrcrecordid>eNp90M1LwzAUAPAgCs7pwf-g6EmhMy9pkvYo4hcMdtFzSNNXl1HbmWQT_3szOvQgCA8eD368L0LOgc6ASn4Ds6IqhCzhgEyAKpVzgPKQTCilPJeVgGNyEsIqlYJxPiFqUXfuY4PZ2sSIvscmw2iXrn_Lhjbboo_Omi4LrnN26FNu8NN0XTglR63pAp7t85S8Pty_3D3l88Xj893tPLeFEDGvpVRgVCGUoClqXkFdlGgsRdrYprWMU8k41jVltZFU2KrCChmWolHSAp-Si7HvEKLTwbqIdpk26dFGDZxJyVVClyNa-yHdEqJeDRvfp700AwYlSFnu1NWorB9C8NjqtXfvxn9poHr3PA16_7xkr0e7m2iiG_ofvB38L9Trpv0P_-38DYvRe60</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121816687</pqid></control><display><type>article</type><title>Oblique patterned etching of vertical silicon sidewalls</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Bruce Burckel, D. ; Finnegan, Patrick S. ; David Henry, M. ; Resnick, Paul J. ; Jarecki, Robert L.</creator><creatorcontrib>Bruce Burckel, D. ; Finnegan, Patrick S. ; David Henry, M. ; Resnick, Paul J. ; Jarecki, Robert L. ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><description>A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4945681</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; cell membranes ; dielectrics ; Faraday cage ; High aspect ratio ; MATERIALS SCIENCE ; Patterning ; plasma etching ; Silicon ; Topography</subject><ispartof>Applied physics letters, 2016-04, Vol.108 (14)</ispartof><rights>AIP Publishing LLC</rights><rights>2016 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c455t-b6671a745750750b391b48eac0e0dcdfc230623ebb02ba605c99e9e2e85d76c13</citedby><cites>FETCH-LOGICAL-c455t-b6671a745750750b391b48eac0e0dcdfc230623ebb02ba605c99e9e2e85d76c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4945681$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,4512,27924,27925,76384</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1326637$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bruce Burckel, D.</creatorcontrib><creatorcontrib>Finnegan, Patrick S.</creatorcontrib><creatorcontrib>David Henry, M.</creatorcontrib><creatorcontrib>Resnick, Paul J.</creatorcontrib><creatorcontrib>Jarecki, Robert L.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><title>Oblique patterned etching of vertical silicon sidewalls</title><title>Applied physics letters</title><description>A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.</description><subject>Applied physics</subject><subject>cell membranes</subject><subject>dielectrics</subject><subject>Faraday cage</subject><subject>High aspect ratio</subject><subject>MATERIALS SCIENCE</subject><subject>Patterning</subject><subject>plasma etching</subject><subject>Silicon</subject><subject>Topography</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90M1LwzAUAPAgCs7pwf-g6EmhMy9pkvYo4hcMdtFzSNNXl1HbmWQT_3szOvQgCA8eD368L0LOgc6ASn4Ds6IqhCzhgEyAKpVzgPKQTCilPJeVgGNyEsIqlYJxPiFqUXfuY4PZ2sSIvscmw2iXrn_Lhjbboo_Omi4LrnN26FNu8NN0XTglR63pAp7t85S8Pty_3D3l88Xj893tPLeFEDGvpVRgVCGUoClqXkFdlGgsRdrYprWMU8k41jVltZFU2KrCChmWolHSAp-Si7HvEKLTwbqIdpk26dFGDZxJyVVClyNa-yHdEqJeDRvfp700AwYlSFnu1NWorB9C8NjqtXfvxn9poHr3PA16_7xkr0e7m2iiG_ofvB38L9Trpv0P_-38DYvRe60</recordid><startdate>20160404</startdate><enddate>20160404</enddate><creator>Bruce Burckel, D.</creator><creator>Finnegan, Patrick S.</creator><creator>David Henry, M.</creator><creator>Resnick, Paul J.</creator><creator>Jarecki, Robert L.</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20160404</creationdate><title>Oblique patterned etching of vertical silicon sidewalls</title><author>Bruce Burckel, D. ; Finnegan, Patrick S. ; David Henry, M. ; Resnick, Paul J. ; Jarecki, Robert L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c455t-b6671a745750750b391b48eac0e0dcdfc230623ebb02ba605c99e9e2e85d76c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>cell membranes</topic><topic>dielectrics</topic><topic>Faraday cage</topic><topic>High aspect ratio</topic><topic>MATERIALS SCIENCE</topic><topic>Patterning</topic><topic>plasma etching</topic><topic>Silicon</topic><topic>Topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bruce Burckel, D.</creatorcontrib><creatorcontrib>Finnegan, Patrick S.</creatorcontrib><creatorcontrib>David Henry, M.</creatorcontrib><creatorcontrib>Resnick, Paul J.</creatorcontrib><creatorcontrib>Jarecki, Robert L.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bruce Burckel, D.</au><au>Finnegan, Patrick S.</au><au>David Henry, M.</au><au>Resnick, Paul J.</au><au>Jarecki, Robert L.</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oblique patterned etching of vertical silicon sidewalls</atitle><jtitle>Applied physics letters</jtitle><date>2016-04-04</date><risdate>2016</risdate><volume>108</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4945681</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2016-04, Vol.108 (14) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1326637 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics cell membranes dielectrics Faraday cage High aspect ratio MATERIALS SCIENCE Patterning plasma etching Silicon Topography |
| title | Oblique patterned etching of vertical silicon sidewalls |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T05%3A05%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Oblique%20patterned%20etching%20of%20vertical%20silicon%20sidewalls&rft.jtitle=Applied%20physics%20letters&rft.au=Bruce%20Burckel,%20D.&rft.aucorp=Sandia%20National%20Lab.%20(SNL-NM),%20Albuquerque,%20NM%20(United%20States)&rft.date=2016-04-04&rft.volume=108&rft.issue=14&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.4945681&rft_dat=%3Cproquest_osti_%3E2121816687%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2121816687&rft_id=info:pmid/&rfr_iscdi=true |