Oblique patterned etching of vertical silicon sidewalls

Oblique patterned etching of vertical silicon sidewalls

A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity patte...

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Veröffentlicht in:Applied physics letters 2016-04, Vol.108 (14)
Hauptverfasser: Bruce Burckel, D., Finnegan, Patrick S., David Henry, M., Resnick, Paul J., Jarecki, Robert L.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
cell membranes
dielectrics
Faraday cage
High aspect ratio
MATERIALS SCIENCE
Patterning
plasma etching
Silicon
Topography
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Zusammenfassung:A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4945681