Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Electronic coupling and ground‐state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X‐ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier‐selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.