Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems

Semiconducting GaAs is widely used in microwave and millimeter integrated circuits, infrared LEDs, lasers, and solar cells. Introducing semimetallic ErAs nanoparticles provides a way to controllably tune the optical and electronic properties of GaAs. We show that for high volume fractions (0.5%-10%) of ErAs nanoparticles embedded in GaAs, the relaxation dynamics indicates that ErAs forms discrete states in the GaAs band gap. For specific carrier momentum conditions, the localized Schottky states may be occupied, exhibit carrier trapping, or inject carriers into the GaAs conduction band. Carrier occupation and scattering from the Schottky states has not previously been reported in optical studies of this system. The scattering mechanism is observed to be active above an occupation threshold where the excited carrier density exceeds the trap density. The array of nanoparticle densities and the characterization of the relaxation pathways at multiple carrier excitation energies represents the most complete fundamental investigation of these systems to date.