Thermal conductivity of Er+3:Y2O3 films grown by atomic layer deposition

Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m−1K−1 to 8 W...

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Veröffentlicht in:Applied physics letters 2013-11, Vol.103 (19)
Hauptverfasser: Raeisi Fard, Hafez, Becker, Nicholas, Hess, Andrew, Pashayi, Kamyar, Proslier, Thomas, Pellin, Michael, Borca-Tasciuc, Theodorian
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Sprache:eng
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Zusammenfassung:Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m−1K−1 to 8 W m−1K−1 upon post deposition annealing, partially due to the suppression of the number of the -OH/H2O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er+3:Y2O3-metal heater was determined to be ∼2.5 × 10−8 m2 K/W.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4829138