Thermal conductivity of Er+3:Y2O3 films grown by atomic layer deposition
Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m−1K−1 to 8 W...
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Veröffentlicht in: | Applied physics letters 2013-11, Vol.103 (19) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m−1K−1 to 8 W m−1K−1 upon post deposition annealing, partially due to the suppression of the number of the -OH/H2O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er+3:Y2O3-metal heater was determined to be ∼2.5 × 10−8 m2 K/W. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4829138 |