Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors

Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors

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Veröffentlicht in:Applied physics letters 2013-01, Vol.102 (4)
Hauptverfasser: Ahn, Kwangseok, Beom Kim, Jong, Park, Hyunjun, Kim, Hyunjung, Hyung Lee, Moo, Joon Kim, Beom, Ho Cho, Jeong, Sung Kang, Moon, Ryeol Lee, Dong
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container_issue 4
container_start_page
container_title Applied physics letters
container_volume 102
creator Ahn, Kwangseok
Beom Kim, Jong
Park, Hyunjun
Kim, Hyunjung
Hyung Lee, Moo
Joon Kim, Beom
Ho Cho, Jeong
Sung Kang, Moon
Ryeol Lee, Dong
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doi_str_mv 10.1063/1.4789873
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title Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors
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