Polythiophene-block-polyfluorene and Polythiophene-block-poly(fluorene-co-benzothiadiazole): Insights into the Self-Assembly of All-Conjugated Block Copolymers
All-conjugated block copolymers have significant potential for solution-processed optoelectronic applications, in particular those relying on a p/n junction. Herein, we report the synthesis and structure of all-conjugated diblock copolymers poly(3-hexylthiophene)-block-poly(9,9-dioctylfluorene) and...
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Veröffentlicht in: | Macromolecules 2011-02, Vol.44 (3), p.530-539 |
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Sprache: | eng |
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Zusammenfassung: | All-conjugated block copolymers have significant potential for solution-processed optoelectronic applications, in particular those relying on a p/n junction. Herein, we report the synthesis and structure of all-conjugated diblock copolymers poly(3-hexylthiophene)-block-poly(9,9-dioctylfluorene) and poly(3-hexylthiophene)-block-poly(9,9-dioctylfluorene-co-benzothiadiazole) in thin films and in the bulk. The diblock copolymers are prepared using a combination of Grignard metathesis polymerization and Suzuki polycondensation and characterized with NMR spectroscopy, size-exclusion chromatography, multiangle laser light scattering, and UV/vis spectroscopy. Structure in thin films and in the bulk is characterized using differential scanning calorimetry, X-ray diffraction, small-angle X-ray scattering, and atomic force microscopy. Diblock copolymer thin films self-assemble into a crystalline nanostructure with some long-range order after extended solvent annealing, and X-ray scattering measurements show that powder samples exhibit crystallinity throughout the bulk. By temperature dependent X-ray scattering measurements, we find that diblock copolymers self-assemble into crystalline nanowires with phase segregated block copolymer domains. These measurements show all-conjugated diblock copolymers may be useful for achieving solution-processed active layers in organic photovoltaics and light-emitting diodes with optimized structural and photophysical characteristics. |
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ISSN: | 0024-9297 1520-5835 |
DOI: | 10.1021/ma102728z |