Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Thin films of NiSb(0001) have been grown using molecular beam epitaxy on GaAs(111)B substrates and characterized with a variety of structural and surface-specific techniques supported by density functional theory calculations. Several differences were observed between NiSb and the more widely studie...

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Veröffentlicht in:	Journal of crystal growth 2012-10, Vol.357 (C), p.1-8
Hauptverfasser:	Aldous, James D., Burrows, Christopher W., Maskery, Ian, Brewer, Matthew, Pickup, David, Walker, Marc, Mudd, James, Hase, Thomas P.A., Duffy, Jon A., Wilkins, Stuart, Sánchez-Hanke, Cecilia, Bell, Gavin R.
Format:	Artikel
Sprache:	eng
Schlagworte:	36 A1. High resolution X-ray diffraction A1. Reflection high energy electron diffraction A1. Surface structure A3. Molecular beam epitaxy B1. Antimonides B2. Magnetic materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Crystallites Density functional theory Electron states Epitaxial growth Equations of state, phase equilibria, and phase transitions Exact sciences and technology Gallium Materials science Mathematical analysis Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Methods of electronic structure calculations Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Oxides Physics Reconstruction Solubility, segregation, and mixing phase separation Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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