Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Thin films of NiSb(0001) have been grown using molecular beam epitaxy on GaAs(111)B substrates and characterized with a variety of structural and surface-specific techniques supported by density functional theory calculations. Several differences were observed between NiSb and the more widely studie...

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Veröffentlicht in:	Journal of crystal growth 2012-10, Vol.357 (C), p.1-8
Hauptverfasser:	Aldous, James D., Burrows, Christopher W., Maskery, Ian, Brewer, Matthew, Pickup, David, Walker, Marc, Mudd, James, Hase, Thomas P.A., Duffy, Jon A., Wilkins, Stuart, Sánchez-Hanke, Cecilia, Bell, Gavin R.
Format:	Artikel
Sprache:	eng
Schlagworte:	36 A1. High resolution X-ray diffraction A1. Reflection high energy electron diffraction A1. Surface structure A3. Molecular beam epitaxy B1. Antimonides B2. Magnetic materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Crystallites Density functional theory Electron states Epitaxial growth Equations of state, phase equilibria, and phase transitions Exact sciences and technology Gallium Materials science Mathematical analysis Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Methods of electronic structure calculations Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Oxides Physics Reconstruction Solubility, segregation, and mixing phase separation Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Beschreibung
Zusammenfassung:	Thin films of NiSb(0001) have been grown using molecular beam epitaxy on GaAs(111)B substrates and characterized with a variety of structural and surface-specific techniques supported by density functional theory calculations. Several differences were observed between NiSb and the more widely studied MnSb. A new (4×4) surface reconstruction was seen on NiSb(0001), along with other reconstructions common to MnSb or MnAs. Strain relaxation differs between NiSb and MnSb, with strained layers 10nm thick persisting in NiSb and some crystallites of (11¯01) orientation appearing in thick (0001) films. Ga segregation through NiSb(0001) films does not occur, unlike in MnSb, and the native oxide of NiSb is more benign than the Mn-rich oxides of MnSb. ► Epitaxial growth of high quality NiSb on GaAs is shown for the first time. ► Strain relaxation is investigated experimentally and theoretically. ► Ga segregation is suppressed and the native oxide is more benign than on MnSb. ► The electronic structure of NiSb is reported.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2012.07.010