Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs
Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and pass...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-08, Vol.59 (8), p.2115-2122 |
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| container_title | IEEE transactions on electron devices |
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| creator | DasGupta, S. Min Sun Armstrong, A. Kaplar, R. J. Marinella, M. J. Stanley, J. B. Atcitty, S. Palacios, T. |
| description | Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs |
| doi_str_mv | 10.1109/TED.2012.2198652 |
| format | Article |
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J. ; Marinella, M. J. ; Stanley, J. B. ; Atcitty, S. ; Palacios, T.</creator><creatorcontrib>DasGupta, S. ; Min Sun ; Armstrong, A. ; Kaplar, R. J. ; Marinella, M. J. ; Stanley, J. B. ; Atcitty, S. ; Palacios, T. ; Sandia National Laboratories</creatorcontrib><description>Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs <; V th , V ds = 0). Two different trapping components, i.e., TG1 (E a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al 0.15 Ga 0.85 N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E a 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2198652</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium nitrides ; Applied sciences ; Bias ; Charge carrier processes ; Drains ; Electronics ; Exact sciences and technology ; Galium nitride (GaN) ; Gallium nitride ; Gates ; HEMTs ; high electron mobility transistor (HEMT) ; High electron mobility transistors ; Logic gates ; MODFETs ; monochromatic light ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; slow transients ; Stress ; Stresses ; Transient analysis ; Transistors ; Trapping</subject><ispartof>IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2115-2122</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-ce9d06a54f03b0abde9dacca75d8f05f1277241a14c1d57227abb44e1625749d3</citedby><cites>FETCH-LOGICAL-c447t-ce9d06a54f03b0abde9dacca75d8f05f1277241a14c1d57227abb44e1625749d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6205618$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6205618$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26186133$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/1073935$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>DasGupta, S.</creatorcontrib><creatorcontrib>Min Sun</creatorcontrib><creatorcontrib>Armstrong, A.</creatorcontrib><creatorcontrib>Kaplar, R. J.</creatorcontrib><creatorcontrib>Marinella, M. J.</creatorcontrib><creatorcontrib>Stanley, J. B.</creatorcontrib><creatorcontrib>Atcitty, S.</creatorcontrib><creatorcontrib>Palacios, T.</creatorcontrib><creatorcontrib>Sandia National Laboratories</creatorcontrib><title>Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs <; V th , V ds = 0). Two different trapping components, i.e., TG1 (E a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al 0.15 Ga 0.85 N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E a 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps.</description><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Bias</subject><subject>Charge carrier processes</subject><subject>Drains</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Galium nitride (GaN)</subject><subject>Gallium nitride</subject><subject>Gates</subject><subject>HEMTs</subject><subject>high electron mobility transistor (HEMT)</subject><subject>High electron mobility transistors</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>monochromatic light</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>slow transients</subject><subject>Stress</subject><subject>Stresses</subject><subject>Transient analysis</subject><subject>Transistors</subject><subject>Trapping</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc1vEzEQxVcIJELhjsTFAiFx2dTf6z22TUiQChwauFoT72zqsrVT21HFf4-rRD1wGI2e5jdPmnlN857ROWO0P98sF3NOGZ9z1hut-ItmxpTq2l5L_bKZUcpM2wsjXjdvcr6rUkvJZ814M8VHssCSYL_3YUc2CUL2GEomwwFJiWQFBQmEgSwS-EAuPWRyUxLmTKpc-90tuUwIf4b4GMjvOBXYIbmYVvDjvBZZL79v8tvm1QhTxnenftb8-rrcXK3b65-rb1cX162Tsiutw36gGpQcqdhS2A5Vg3PQqcGMVI2Mdx2XDJh0bFAd5x1st1Ii01x1sh_EWfPx6Btz8TY7X9DduhgCumIZ7UQvVIW-HKF9ig8HzMXe--xwmiBgPGTLBFPaGClZRT_9h97FQwr1hOrGDaVcGVMpeqRcijknHO0--XtIfytkn9KxNR37lI49pVNXPp-MITuYxvp15_PzHtfMaCZE5T4cOY-Iz2PNqaqE-AdeP5UU</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>DasGupta, S.</creator><creator>Min Sun</creator><creator>Armstrong, A.</creator><creator>Kaplar, R. 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B. ; Atcitty, S. ; Palacios, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-ce9d06a54f03b0abde9dacca75d8f05f1277241a14c1d57227abb44e1625749d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Bias</topic><topic>Charge carrier processes</topic><topic>Drains</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Galium nitride (GaN)</topic><topic>Gallium nitride</topic><topic>Gates</topic><topic>HEMTs</topic><topic>high electron mobility transistor (HEMT)</topic><topic>High electron mobility transistors</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>monochromatic light</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>slow transients</topic><topic>Stress</topic><topic>Stresses</topic><topic>Transient analysis</topic><topic>Transistors</topic><topic>Trapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DasGupta, S.</creatorcontrib><creatorcontrib>Min Sun</creatorcontrib><creatorcontrib>Armstrong, A.</creatorcontrib><creatorcontrib>Kaplar, R. J.</creatorcontrib><creatorcontrib>Marinella, M. J.</creatorcontrib><creatorcontrib>Stanley, J. B.</creatorcontrib><creatorcontrib>Atcitty, S.</creatorcontrib><creatorcontrib>Palacios, T.</creatorcontrib><creatorcontrib>Sandia National Laboratories</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DasGupta, S.</au><au>Min Sun</au><au>Armstrong, A.</au><au>Kaplar, R. J.</au><au>Marinella, M. J.</au><au>Stanley, J. B.</au><au>Atcitty, S.</au><au>Palacios, T.</au><aucorp>Sandia National Laboratories</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-08-01</date><risdate>2012</risdate><volume>59</volume><issue>8</issue><spage>2115</spage><epage>2122</epage><pages>2115-2122</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs <; V th , V ds = 0). Two different trapping components, i.e., TG1 (E a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al 0.15 Ga 0.85 N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E a 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2198652</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
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| subjects | Aluminum gallium nitrides Applied sciences Bias Charge carrier processes Drains Electronics Exact sciences and technology Galium nitride (GaN) Gallium nitride Gates HEMTs high electron mobility transistor (HEMT) High electron mobility transistors Logic gates MODFETs monochromatic light Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices slow transients Stress Stresses Transient analysis Transistors Trapping |
| title | Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs |
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