Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and pass...

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Veröffentlicht in:IEEE transactions on electron devices 2012-08, Vol.59 (8), p.2115-2122
Hauptverfasser: DasGupta, S., Min Sun, Armstrong, A., Kaplar, R. J., Marinella, M. J., Stanley, J. B., Atcitty, S., Palacios, T.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Applied sciences
Bias
Charge carrier processes
Drains
Electronics
Exact sciences and technology
Galium nitride (GaN)
Gallium nitride
Gates
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
Logic gates
MODFETs
monochromatic light
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
slow transients
Stress
Stresses
Transient analysis
Transistors
Trapping
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Beschreibung
Zusammenfassung:Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2198652