Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si6H12). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the film...

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Veröffentlicht in:ACS applied materials & interfaces 2012-05, Vol.4 (5), p.2680-2685
Hauptverfasser: Iyer, Ganjigunte R. S, Hobbie, Erik K, Guruvenket, Srinivasan, Hoey, Justin M, Anderson, Kenneth J, Lovaasen, John, Gette, Cody, Schulz, Douglas L, Swenson, Orven F, Elangovan, Arumugasamy, Boudjouk, P
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Sprache:eng
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Zusammenfassung:We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si6H12). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder–order transition in a bonded Si network. Our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient postprocessing to produce crystalline silicon thin films.
ISSN:1944-8244
1944-8252
DOI:10.1021/am300334p