X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N 1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N O–...

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Veröffentlicht in:Journal of crystal growth 2009-04, Vol.311 (8), p.2341-2344
Hauptverfasser: Yuan, G.D., Ye, Z.Z., Huang, J.Y., Zhu, Z.P., Perkins, C.L., Zhang, S.B.
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Sprache:eng
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Zusammenfassung:The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N 1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–N O–H species, and the lower one perhaps derive from the (NH 2) − cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al 2p3/2 photoelectron peaks revealed an Al–N bonding state, a key factor to the co-doping method.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.01.128