The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state device

Highly doped or alloyed Gd 2 O 3 in HfO 2 films form heterojunction diodes with silicon. Single neutron capture events can be identified with a Hf 0.85 Gd 0.15 O 1.93 to n-type silicon heterojunction. With long pulse integration times and suppression of the smaller pulses, there is agreement between the key pulse height spectral features and those predicted by Monte Carlo simulations. The latter align very well with the decay channels of the Gd following neutron capture, particularly those involving the Gd K-shell Auger electron resonances.