Fabrication of Amorphous ZnO TFT with Tunable Channel Length

The paper discusses the fabrication of amorphous zinc oxide (a:ZnO)-top gate top contact (the gate is situated on the top and the contacts are taken from the top) thin-film transistor (TFT) using spin-spray pyrolysis (SSP) unit. The solutions of ZnO and poly-vinyl-alcohol (PVA) are synthesized separately by the sol–gel method. The ZnO and PVA solution are coated over glass substrate using the SSP unit and drop-cast technique, respectively. These films are characterized using an optical profilometer, X-ray diffractometer, energy dispersive X-ray analysis, ultraviolet–visible spectrophotometry and Keithley measurement system. The XRD and EDAX measurement confirm the amorphous nature and composition respectively. The thickness of the ZnO and PVA film are 460 nm and 600 nm, respectively. The resistance of ZnO film is 100 KΩ. Using the absorption spectrum, we calculate the bandgap of ZnO and PVA thin film samples which are 3.05 eV and 3.9 eV respectively. The metal–insulator–metal (MIM) structure is fabricated using fluorine-doped tin oxide, PVA and silver paste. The MIM structure is characterized for the electrical parameters such as capacitance and dielectric constant ( ε r ) which is found to be 0.4 μF and 8 respectively at 40 Hz frequency. The TFT is fabricated by depositing the aluminium as electrode, ZnO as channel layer and and PVA as insulator layer of TFT with different W/L ratios. The TFT parameters such as threshold voltage (V th ), on/off current ratio (I on/off ) and mobility are studied and presented. The results confirm that V th decreases with the shrinking of channel length. Current ratio I on/off increases with the reduction of the channel length due to the increase in on-current value.