Ensemble Monte Carlo Electron Transport Simulation for GaN n+–n–n+ Diode

Ensemble Monte Carlo simulator is used for solution of Boltzmann transport equation coupling with Poisson equation. We study the electron transport in cubic GaN n+–n–n+ for voltages range from 0.5 to 4 V. In this simulation technique, spatial motion of electron is treated semi-classically and scattering mechanisms included are those due to phonons scattering and ionized impurities scattering. Profile of the electron density, average velocity, kinetic energy, electrostatic potential and electric field are computed. Results are reported for different lattice temperature and various active layer lengths.