Characterization of In-House Fabricated Four-Channel Array Si PIN Photodetectors for Radiation-based Image Systems

Radiation-based imaging systems comprise multiple radiation sensors that are assembled with coupled Si PIN (positive — intrinsic — negative) photodetectors and scintillators. This paper describes the fabrication and characterization of a four-channel array Si PIN photodetector for security inspection systems. The Si PIN photodetector was fabricated using conventional (CMOS) processes at the Radiation Equipment Fab. The junction depth, passivation, and anti-reflection layer of the photodetector were controlled to maximize the light detection efficiency and the signal-to-noise ratio. The spectral responsivity obtained was 0.28 A/W for the cadmium tungstate (CWO) emission at a wavelength of 475 nm. Finally, a line pattern image was acquired using the fabricated Si PIN sensor and a self-developed readout and data acquisition system. The significance of this study is it confirms the feasibility of using the developed array-type Si PIN photodetectors in radiation-based imaging systems.