Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices. [Display omitted] •A design method of single-gated FBFETs is proposed.•The latch-up mechanism is examined by conducting an equivalent circuit analysis.•The superior device characteristics open the promising possibility of FBFETs.