Compact 2.5 Gb/s Burst‐Mode Receiver with Optimum APD Gain for XG‐PON1 and GPON Applications
This letter presents a compact 2.5 Gb/s burst‐mode receiver using the first reported monolithic amplifier IC developed with 0.25 …m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the...
Gespeichert in:
Veröffentlicht in: | ETRI journal 2009, 31(5), , pp.622-624 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This letter presents a compact 2.5 Gb/s burst‐mode receiver using the first reported monolithic amplifier IC developed with 0.25 …m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next‐generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream. |
---|---|
ISSN: | 1225-6463 2233-7326 |
DOI: | 10.4218/etrij.09.0209.0227 |