Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the proce...

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Veröffentlicht in:ETRI journal 2013, 35(4), , pp.632-637
Hauptverfasser: Kim, Sang Gi, Park, Hoon Soo, Na, Kyoung Il, Yoo, Seong Wook, Won, Jongil, Koo, Jin Gun, Chai, Sang Hoon, Park, Hyung‐Moo, Yang, Yil Suk, Lee, Jin Ho
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Sprache:eng
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Zusammenfassung:In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n drift layer due to the trenched p‐pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.13.1912.0012