X Band 7.5 W MMIC Power Amplifier for Radar Application
An X-band MMIC power amplifier for radar application is developed using 0.25-μm gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. Th...
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| Veröffentlicht in: | Journal of semiconductor technology and science 2008, 8(2), 30, pp.139-142 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | An X-band MMIC power amplifier for radar application is developed using 0.25-μm gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is 3.5 mm × 3.9 mm. KCI Citation Count: 2 |
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| ISSN: | 1598-1657 2233-4866 |
| DOI: | 10.5573/JSTS.2008.8.2.139 |