Effect of Counter-doping Thickness on Double-gate MOSFET Characteristics

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V)characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance (gm) and the drain conductance (gd)increase with an increase in p-type counter-doping thickness (Tc). Very high value of transconductance (gm= 38 mS/μm) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device. KCI Citation Count: 0