[Devices] Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA)junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y22-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%. KCI Citation Count: 8