Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors

Separate extraction of source (RS) and drain (RD) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose “Avalanche Hot-Source Method (AHSM)” for simple separated extraction of RS and RD in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of RS and RD. We also confirmed that there is a negligible drift in the threshold voltage (VT) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions. KCI Citation Count: 5