A Finite Element Model for Bipolar Resistive Random Access Memory

A Finite Element Model for Bipolar Resistive Random Access Memory

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our mod...

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Veröffentlicht in:Journal of semiconductor technology and science 2014, 14(3), 57, pp.268-273
Hauptverfasser: 김관용, 이광석, 이근호, 박영관, 최우영
Format: Artikel
Sprache:eng
Schlagworte:
전기공학
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Zusammenfassung:The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models. KCI Citation Count: 7
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2014.14.3.268