Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

Fast recovery diodes (FRDs) were developed using the p++/n-/n++ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analys...

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Veröffentlicht in:Journal of semiconductor technology and science 2014, 14(4), 58, pp.495-502
Hauptverfasser: Bouangeune, Daoheung, Choi, Sang-Sik, Cho, Deok-Ho, Shim, Kyu-Hwan, Chang, Sung-Yong, Leem, See-Jong, Choi, Chel-Jong
Format: Artikel
Sprache:eng
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전기공학
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Zusammenfassung:Fast recovery diodes (FRDs) were developed using the p++/n-/n++ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current,
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2014.14.4.495