A stable U-band VCO in 65 nm CMOS with -0.11 dBm high output power
A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequ...
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Veröffentlicht in: | Journal of semiconductor technology and science 2015, 15(4), 64, pp.437-444 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is 0.16×0.16 mm2 and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured FOMP was -190.8 dBc/Hz. KCI Citation Count: 0 |
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ISSN: | 1598-1657 2233-4866 |
DOI: | 10.5573/JSTS.2015.15.4.437 |