The Study of Phase-change with Temperature and Electric field in Chalcogenide Thin Film
We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$S...
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| Veröffentlicht in: | Transactions on electrical and electronic materials 2003, 4(5), , pp.24-27 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | kor |
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| Zusammenfassung: | We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration. |
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| ISSN: | 1229-7607 2092-7592 |