The Elimination Characteristics by Impressed Voltage of Holography Grating in Chacogenide Thin Film

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are As40Ge10Se15S35, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it. KCI Citation Count: 0