Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO...

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Veröffentlicht in:Transactions on electrical and electronic materials 2010, 11(5), , pp.234-237
Hauptverfasser: Kim, Do-Kyung, Bae, Jung-Hyeon, Kim, Hyun-Jae, Kang, Myung-Koo
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Sprache:eng
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Zusammenfassung:Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately 600℃. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than 2,000℃. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films. KCI Citation Count: 0
ISSN:1229-7607
2092-7592
DOI:10.4313/TEEM.2010.11.5.234