Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si
Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO...
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Veröffentlicht in: | Transactions on electrical and electronic materials 2010, 11(5), , pp.234-237 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately 600℃. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than 2,000℃. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films. KCI Citation Count: 0 |
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ISSN: | 1229-7607 2092-7592 |
DOI: | 10.4313/TEEM.2010.11.5.234 |