Characteristic of Al-In-Sn-ZnO Thin Film Prepared by FTS System with Hetero Targets
In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were...
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Veröffentlicht in: | Transactions on electrical and electronic materials 2011, 12(2), , pp.76-79 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO (In_2O23 90wt%, SnO22 10wt%) target and an AZO (ZnO 98wt%, Al22O23 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX). KCI Citation Count: 3 |
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ISSN: | 1229-7607 2092-7592 |
DOI: | 10.4313/TEEM.2011.12.2.76 |