Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide(ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middlelayer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and opticaltransmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10-5 Ω cm. Aftera post annealing treatment of 400℃, the resistivity is reduced to 4.332×10-5 Ω cm. The reduction of resistivity shouldbe explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hallconcentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Aglayer. KCI Citation Count: 3