Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate
Pb(Zr0.52Ti0.48)O3 thin films of 1.5 μm thickness were grown on Pt/Ti/Gd3Ga5O12 substrate by RF magnetron sputteringat annealing temperatures ranging from 550℃ to 700℃. We evaluated the residual stress, by using a William-Hall plot,as a function of the annealing temperatures of PZT thin film with a...
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| Veröffentlicht in: | Transactions on electrical and electronic materials 2014, 15(5), , pp.253-256 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | Pb(Zr0.52Ti0.48)O3 thin films of 1.5 μm thickness were grown on Pt/Ti/Gd3Ga5O12 substrate by RF magnetron sputteringat annealing temperatures ranging from 550℃ to 700℃. We evaluated the residual stress, by using a William-Hall plot,as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stressesof PZT thin film of 1.5 μm thickness were changed by varying the annealing temperature. Also, we measured thehysteresis characteristic of PZT thin films of 1.5 μm thickness to evaluate for application of an optoelectronic device. KCI Citation Count: 0 |
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| ISSN: | 1229-7607 2092-7592 |
| DOI: | 10.4313/TEEM.2014.15.5.253 |