Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4

We report the enhanced electrical performance of a MoS 2 field-effect transistor (FET) by using a contact with a layered CrPS 4 . Our transport measurements revealed that MoS 2 channel with CrPS 4 junction showed higher mobility of 33.9 cm 2 /Vs than that without CrPS 4 junction on SiO 2 /Si substrate. We also fabricated a MoS 2 FET with a top gate insulator, CrPS 4 , which showed low leakage current of 10 −11 A and high on/off ratio of 10 5 . In a dual-gated FET with SiO 2 bottom gate insulator and CrPS 4 top gate insulator, much decreased sub-threshold swing of 0.70 V/dec was obtained.