Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm 2 /Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.