Electrical properties of sputtered ZnO films with nitrogen and phosphorous Co-doping

Acceptor (N)-acceptor (P) co-doped ZnO films were deposited at N 2 O pressures varied between 5m Torr and 50 m Torr on Si (001) substrates using radio frequency sputtering. N 2 O plasma in a growth chamber and a sputtering target containing Zn 3 P 2 were used as the sources for N and P, respectively. Electrical measurements revealed that all the films had an n -type conduction in the as-grown state for all N 2 O pressures. However, for the films grown at an N 2 O pressure of 10 m Torr, annealing at 800°C resulted in flipping conduction behavior from n -to p -type. Low temperature photoluminescence results confirmed the presence of an acceptor-related emission at 3.303 eV for the p -type ZnO films only.