Switching characteristics of copper-doped GexTe1−x solid electrolyte films incorporated by nitrogen for programmable metallization cell memory applications

The switching characteristics of PMC devices (device diameter =0.5 μm) with copper-doped Ge x Te 1−x N electrolyte films were investigated as a function of the Te composition of the electrolyte films. Nitrogen doped in order to increase the crystallization temperature of GeTe chalcogenide films was incorporated into the Ge lattice alone, and copper in Ge x Te 1−x N films was incorporated into the Te lattice. The copper concentration in copper-doped Ge x Te 1−x N layers is directly related to the Te concentration in GeTeN films. PMC devices with copper-doped Ge 75 Te 25 N electrolytes were swept at a threshold voltage of 1.0 V and showed stable switching characteristics with a switching time of 1 μs with a set voltage of 2.5 V and a reset voltage of −4.0 V.