Inhibiting the growth of Cu3Sn and Kirkendall voids in the Cu/Sn-Ag-Cu system by minor Pd alloying
In this study, the metallurgical reaction between Cu substrates (electrolytic type) and a Sn3Ag0.5Cu-xPd alloy at 180°C was examined using a scanning electron microscope (SEM), electron probe microanalyzer (EPMA), focused ion beam (FIB) microscope, and transmission electron microscope (TEM). The res...
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Veröffentlicht in: | Electronic materials letters 2012, 8(5), , pp.495-501 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this study, the metallurgical reaction between Cu substrates (electrolytic type) and a Sn3Ag0.5Cu-xPd alloy at 180°C was examined using a scanning electron microscope (SEM), electron probe microanalyzer (EPMA), focused ion beam (FIB) microscope, and transmission electron microscope (TEM). The results showed that the growth of Cu
3
Sn in the Cu/Sn-Ag-Cu solder joints was substantially suppressed by doping with a minor quantity of Pd (0.1–0.7 wt. %) in the solder alloy. The sluggish growth of Cu
3
Sn reduced the formation of Kirkendall voids at the Cu/Cu
3
Sn interface and significantly improved the mechanical reliability of the joint interface. It was argued that a minor addition of Pd into the solder stabilized the Cu
6
Sn
5
phase and enlarged the interdiffusion coefficient of Cu
6
Sn
5
but diminished that of the neighboring phase (Cu
3
Sn), thereby decreasing the Kirkendall effect in the Cu/Sn-Ag-Cu reactive system. |
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ISSN: | 1738-8090 2093-6788 |
DOI: | 10.1007/s13391-012-2049-3 |