Synthesis and characterization of Cu(In, Ga)Se2 absorption/scattering layers by electrodeposition method

We propose a Cu(In, Ga)Se 2 double absorption layer structure with both absorption and scattering effects. We synthesized CIGS absorption layers by electro-deposition using different electrical potentials. Structural properties were characterized by x-ray diffraction and field-emission scanning electron microscopy. Optical properties were measured using UV/VIS spectrometry. Grain size and surface roughness were controlled by manipulation of the electrical potential. From these results, the currently typical, single CIGS absorption layer, was replaced with two CIGS layers: a top CIGS layer of smaller grain size and a bottom CIGS layer of larger grain size. We found that the larger-grain CIGS layer provides better scattering effect, so that the CIGS double layer structure provides enhanced light absorption performance in visible light. By applying this new CIGS double layer structure, it is expected that conversion efficiency will be increased.