Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO 2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO 2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600℃, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 × 10 −7 A/cm 2 were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO 2 /Si interface, and it reduces after annealing.