Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films
In this paper, we present a tandem-type vertically integrated nanogenerator (TVING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TVING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (Al...
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Veröffentlicht in: | Journal of semiconductor technology and science 2019, 19(2), 86, pp.233-238 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, we present a tandem-type vertically integrated nanogenerator (TVING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TVING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (AlN/ZnO/AlN). Moreover, the TVING device can be fabricated in a tandem-type structure simply through the vertical integration of two similar VING devices. This device will be usefully applied for biocompatible micro-energy harvesting systems. KCI Citation Count: 2 |
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ISSN: | 1598-1657 2233-4866 |
DOI: | 10.5573/JSTS.2019.19.2.233 |