Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films

In this paper, we present a tandem-type vertically integrated nanogenerator (TVING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TVING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (Al...

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Veröffentlicht in:Journal of semiconductor technology and science 2019, 19(2), 86, pp.233-238
Hauptverfasser: Yim, Munhyuk, Jeon, Buil, Yoon, Giwan
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, we present a tandem-type vertically integrated nanogenerator (TVING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TVING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (AlN/ZnO/AlN). Moreover, the TVING device can be fabricated in a tandem-type structure simply through the vertical integration of two similar VING devices. This device will be usefully applied for biocompatible micro-energy harvesting systems. KCI Citation Count: 2
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2019.19.2.233