The Stress Analysis of Semiconductor Package
In the semiconductor IC(Integrated Circuit) package, the top surface of silicon chip is directly attached to the area of the leadframe with a double-sided adhesive layer, in which the base layer have the upper adhesive layer and the lower adhesive layer. The IC package structure has been known to en...
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Veröffentlicht in: | 한국생산제조학회지 2008, 17(3), , pp.14-19 |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | In the semiconductor IC(Integrated Circuit) package, the top surface of silicon chip is directly attached to the area of the leadframe with a double-sided adhesive layer, in which the base layer have the upper adhesive layer and the lower adhesive layer. The IC package structure has been known to encounter a thermo-mechanical failure mode such as delamination. This failure mode is due to the residual stress on the adhesive surface of silicon chip and leadframe in the curing-cooling process. The induced thermal stress in the curing process has an influence on the cooling residual stress on the silicon chip and leadframe. In this paper, for the minimization of the chip surface damage, the adhesive topologies on the silicon chip are studied through the finite element analysis(FEA). KCI Citation Count: 1 |
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ISSN: | 2508-5093 2508-5107 |