Lattice-Matched AlInGaN Electron-Blocking Layer Embedded in High-Performance GaN-based Light-Emitting Devices

We report on high-performance GaN-based laser diodes (LDs) with a lattice-matched AlInGaN electron blocking layer (EBL) instead of a p -AlGaN EBL. In the low injection current region, the intensity of the electroluminescence (EL) of the LDs with a p -AlGaN EBL was slightly higher than that of the LDs with a p-AlInGaN EBL. However, the EL intensity of the LD with a p-AlInGaN EBL was higher than that of the LD with a p -AlGaN EBL with increasing injection current. Further, the lasing performance of the LD with a p-AlInGaN EBL was better than that of the LD with a p -AlGaN EBL at higher injection currents. From these results, we suggest that the lattice-matched AlInGaN EBL enhances the high-power performance by reducing the droop phenomenon in the light-emitting device.