Simultaneous etching and transfer — Free multilayer graphene sheets derived from C60 thin films

[Display omitted] Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown graphene sheets still remain a big challenge. Here we demonstrate the formation of multi...

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Veröffentlicht in:Journal of industrial and engineering chemistry (Seoul, Korea) 2018, 64(0), , pp.70-75
Hauptverfasser: Hudaya, Chairul, Ahn, Minjeh, Oh, Si Hyoung, Jeon, Bup Ju, Sung, Yung-Eun, Lee, Joong Kee
Format: Artikel
Sprache:eng
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Zusammenfassung:[Display omitted] Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown graphene sheets still remain a big challenge. Here we demonstrate the formation of multilayer graphene (MLG) sheets tailored from C60 thin films on the top of Si/Ni substrate without etching and transfer steps based on Ni films. This self-assembled process separates the MLG sheets from the conductive Ni catalyst, embarking a possibility for direct characterizations of MLG sheets. The fine-tuned C60 films (30nm) are transformed into approximately 17 MLG sheets, thus making it large-area MLG sheets for a variety of direct applications.
ISSN:1226-086X
1876-794X
DOI:10.1016/j.jiec.2018.01.037