Influence of Trap Passivation by Hydrogen on the Electrical Properties of Polysilicon-Based MSM Photodetector

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal- semiconductormetal(MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector,modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface andsilicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantationwith subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improvedphotoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence thesimultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contactinterface. KCI Citation Count: 1